semiconductor group 1 silicon pin diode bar 17 maximum ratings type ordering code (tape and reel) marking package 1) pin configuration bar 17 q62702-a858 l6 sot-23 parameter symbol values unit reverse voltage v r 100 v total power dissipation, t s 95 ?c 2) p tot 250 mw t j 150 ?c forward current i f 140 ma junction temperature storage temperature range t op C 55 + 150 t stg C 55 + 150 thermal resistance junction - ambient 2) r th ja 295 k/w junction - soldering point r th js 215 operating temperature range 1) for detailed information see chapter package outlines. 2) package mounted on alumina 15 mm 16.7 mm 0.7 mm. l rf switch l rf attenuator for frequencies above 1 mhz l low distortion factor l long-term stability of electrical characteristics
semiconductor group 2 bar 17 bar 17 electrical characteristics at t a = 25 ?c, unless otherwise specified. unit values parameter symbol min. typ. max. v forward voltage i f = 100 ma v f C 0.91 1 m s charge carrier life time i f = 10 ma, i r = 6 ma t l C4C na m a reverse current v r = 50 v v r = 100 v i r C C C C 50 1 pf diode capacitance v r = 50 v, f = 1 mhz v r = 0, f = 100 mhz c t C C 0.32 0.37 0.55 C w forward resistance f = 100 mhz, i f = 0.01 ma i f = 0.1 ma i f = 1.0 ma i f = 10 ma r f C C C C 1150 160 23 3.5 C C C C
semiconductor group 3 bar 17 bar 17 forward current i f = f ( v f ) forward resistance r f = f ( i f ) f = 100 mhz forward current i f = f ( t s ; t a *) *package mounted on alumina diode capacitance c t = f ( v r ) i f
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